Doping - Revision history

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Redirected page to Dopant

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	~~[[Category:Done 2018-06-01]]~~		#REDIRECT [[dopant]]
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	<onlyinclude>'''Doping''' is the practice of introducing very small amounts of certain foreign [[atom]]s into the crystal lattice of a [[semiconductor]] to modify its electrical properties. These foreign atoms add [[charge carrier]]s to the semiconductor by creating either an excess or a deficiency of [[electron]]s around the foreign atom.</onlyinclude><ref>''Doping of semiconductors'' [Online]. Available: http://www.mrl.ucsb.edu/~seshadri/old/MATRL100A/class12.pdf</ref> This leads to two distinct types of doping, p-type and n-type. P-type and n-type doping allows for the creation of important [[circuit]] components like [[diode]]s and [[transistor]]s.<ref>''Semiconductors and Doping'' [Online]. Available:https://www.pa.msu.edu/courses/1997spring/PHY232/lectures/semiconductors/semiconductors.html</ref>

	~~===N-type doping===~~
	[[File:N-type doping.png\|framed\|Figure 1. A simplified diagram of an n-type semiconductor.<ref name = a>This image was created by part of the [[Who_we_are\| Energy Education team]].</ref> Only four of the valence electrons of the phosphorus atom are used for bonding, leaving one electron free.]]
	Adding atoms with a greater number of [[valence electron]]s than [[silicon]] to a silicon lattice results in the creation of free electrons. Since silicon has four valence electrons, the most common n-type dopants are atoms with five valence electrons like phosphorus, antimony, and arsenic. When these atoms are incorporated into the silicon lattice, four valence electrons are used to bond with the surrounding silicon atoms, leaving one valence electron free to move into the [[conduction band]] (see Figure 1).<ref>''Doping'' [Online]. Available:http://www.pveducation.org/pvcdrom/pn-junction/doping</ref> N-type doping therefore dramatically increases the [[electrical conductivity]] of the semiconductor by increasing the number of free charge carriers.<ref>''N-type Semiconductor'' [Online]. Available:http://hyperphysics.phy-astr.gsu.edu/hbase/solids/dope.html#~~c3</ref>~~

	~~===P-type doping===~~
	[[File:P-type doping.png\|framed\|Figure 2. A simplified diagram of a boron-doped p-type semiconductor.<ref name = a></ref> Note the missing electron on the right side of the boron atom. This deficiency constitutes a "hole".]]
	~~When an atom with one fewer~~ [[valence electron]] than silicon is added to a silicon lattice, electron deficiencies are created (see Figure 2). These deficiencies are often called "holes".<ref>''P-type Semiconductor'' [Online]. Available:~~http://hyperphysics.phy~~-~~astr.gsu.edu/hbase/solids/dope.html#c4</ref> These holes readily accept free electrons and complement n-type semiconductors as the excess electrons of the n-type can be absorbed by the p~~-type. This property is integral to the p-n junction, a vital component in the [[diode operation\|operation of a diode]]. P-type dopants have three valence electrons, and they include boron, aluminum, and gallium.<ref>''The Doping of Semiconductors'' [Online]. Available:http://hyperphysics.phy-astr.gsu.edu/hbase/solids/dope.html</ref>

	~~For more information on doping semiconductors please see [http://hyperphysics.phy-astr.gsu.edu/hbase/solids/dope.html hyperphysics].~~


	~~==References==~~
	~~{{reflist}}[[Category:Uploaded]]~~
	~~[[category: Mark edit~~]]

Jmdonev: 1 revision imported: Doing upload, largely of old redirects.

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Jmdonev at 21:50, 1 June 2018

2018-06-01T21:50:46Z

← Older revision		Revision as of 21:50, 1 June 2018
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	[[~~category~~: Done ~~2015~~-08-21]]		[[Category:Done 2018-06-01]]

	<onlyinclude>'''Doping''' is the practice of introducing very small amounts of certain foreign [[atom]]s into the crystal lattice of a [[semiconductor]] to modify its electrical properties. These foreign atoms add [[charge carrier]]s to the semiconductor by creating either an excess or a deficiency of [[electron]]s around the foreign atom.</onlyinclude><ref>''Doping of semiconductors'' [Online]. Available: http://www.mrl.ucsb.edu/~seshadri/old/MATRL100A/class12.pdf</ref> This leads to two distinct types of doping, p-type and n-type. P-type and n-type doping allows for the creation of important [[circuit]] components like [[diode]]s and [[transistor]]s.<ref>''Semiconductors and Doping'' [Online]. Available:https://www.pa.msu.edu/courses/1997spring/PHY232/lectures/semiconductors/semiconductors.html</ref>		<onlyinclude>'''Doping''' is the practice of introducing very small amounts of certain foreign [[atom]]s into the crystal lattice of a [[semiconductor]] to modify its electrical properties. These foreign atoms add [[charge carrier]]s to the semiconductor by creating either an excess or a deficiency of [[electron]]s around the foreign atom.</onlyinclude><ref>''Doping of semiconductors'' [Online]. Available: http://www.mrl.ucsb.edu/~seshadri/old/MATRL100A/class12.pdf</ref> This leads to two distinct types of doping, p-type and n-type. P-type and n-type doping allows for the creation of important [[circuit]] components like [[diode]]s and [[transistor]]s.<ref>''Semiconductors and Doping'' [Online]. Available:https://www.pa.msu.edu/courses/1997spring/PHY232/lectures/semiconductors/semiconductors.html</ref>
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	===N-type doping===		===N-type doping===
	[[File:N-type doping.png\|framed\|Figure 1. A simplified diagram of an n-type semiconductor.<ref name = a>This image was created by part of the [[Who_we_are\| Energy Education team]].</ref> Only four of the valence electrons of the phosphorus atom are used for bonding, leaving one electron free.]]		[[File:N-type doping.png\|framed\|Figure 1. A simplified diagram of an n-type semiconductor.<ref name = a>This image was created by part of the [[Who_we_are\| Energy Education team]].</ref> Only four of the valence electrons of the phosphorus atom are used for bonding, leaving one electron free.]]
	Adding atoms with a greater number of [[valence electron]]s than [[silicon]] to a silicon lattice results in the creation of free electrons. Since silicon has four valence electrons, the most common n-type dopants are atoms with five valence electrons like phosphorus, antimony, and arsenic. When these atoms are incorporated into the silicon lattice, four valence electrons are used to bond with the surrounding silicon atoms, leaving one valence electron free to move into the [[conduction band]] (see Figure 1).<ref>''Doping'' [Online]. Available:http://www.pveducation.org/pvcdrom/pn-junction/doping</ref> N-type doping therefore dramatically increases the [[conductivity]] of the semiconductor by increasing the number of free charge carriers.<ref>''N-type Semiconductor'' [Online]. Available:http://hyperphysics.phy-astr.gsu.edu/hbase/solids/dope.html#c3</ref>		Adding atoms with a greater number of [[valence electron]]s than [[silicon]] to a silicon lattice results in the creation of free electrons. Since silicon has four valence electrons, the most common n-type dopants are atoms with five valence electrons like phosphorus, antimony, and arsenic. When these atoms are incorporated into the silicon lattice, four valence electrons are used to bond with the surrounding silicon atoms, leaving one valence electron free to move into the [[conduction band]] (see Figure 1).<ref>''Doping'' [Online]. Available:http://www.pveducation.org/pvcdrom/pn-junction/doping</ref> N-type doping therefore dramatically increases the [[electrical conductivity]] of the semiconductor by increasing the number of free charge carriers.<ref>''N-type Semiconductor'' [Online]. Available:http://hyperphysics.phy-astr.gsu.edu/hbase/solids/dope.html#c3</ref>

	===P-type doping===		===P-type doping===
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	==References==		==References==
	{{reflist}}[[Category:Uploaded]]		{{reflist}}[[Category:Uploaded]]
			[[category: Mark edit]]

J.williams: 1 revision imported

2015-08-26T21:31:51Z

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J.williams at 18:50, 24 August 2015

2015-08-24T18:50:38Z

New page

[[category: Done 2015-08-21]]

<onlyinclude>'''Doping''' is the practice of introducing very small amounts of certain foreign [[atom]]s into the crystal lattice of a [[semiconductor]] to modify its electrical properties. These foreign atoms add [[charge carrier]]s to the semiconductor by creating either an excess or a deficiency of [[electron]]s around the foreign atom.</onlyinclude><ref>''Doping of semiconductors'' [Online]. Available: http://www.mrl.ucsb.edu/~seshadri/old/MATRL100A/class12.pdf</ref> This leads to two distinct types of doping, p-type and n-type. P-type and n-type doping allows for the creation of important [[circuit]] components like [[diode]]s and [[transistor]]s.<ref>''Semiconductors and Doping'' [Online]. Available:https://www.pa.msu.edu/courses/1997spring/PHY232/lectures/semiconductors/semiconductors.html</ref>

===N-type doping===
[[File:N-type doping.png|framed|Figure 1. A simplified diagram of an n-type semiconductor.<ref name = a>This image was created by part of the [[Who_we_are| Energy Education team]].</ref> Only four of the valence electrons of the phosphorus atom are used for bonding, leaving one electron free.]]
Adding atoms with a greater number of [[valence electron]]s than [[silicon]] to a silicon lattice results in the creation of free electrons. Since silicon has four valence electrons, the most common n-type dopants are atoms with five valence electrons like phosphorus, antimony, and arsenic. When these atoms are incorporated into the silicon lattice, four valence electrons are used to bond with the surrounding silicon atoms, leaving one valence electron free to move into the [[conduction band]] (see Figure 1).<ref>''Doping'' [Online]. Available:http://www.pveducation.org/pvcdrom/pn-junction/doping</ref> N-type doping therefore dramatically increases the [[conductivity]] of the semiconductor by increasing the number of free charge carriers.<ref>''N-type Semiconductor'' [Online]. Available:http://hyperphysics.phy-astr.gsu.edu/hbase/solids/dope.html#c3</ref>

===P-type doping===
[[File:P-type doping.png|framed|Figure 2. A simplified diagram of a boron-doped p-type semiconductor.<ref name = a></ref> Note the missing electron on the right side of the boron atom. This deficiency constitutes a "hole".]]
When an atom with one fewer [[valence electron]] than silicon is added to a silicon lattice, electron deficiencies are created (see Figure 2). These deficiencies are often called "holes".<ref>''P-type Semiconductor'' [Online]. Available:http://hyperphysics.phy-astr.gsu.edu/hbase/solids/dope.html#c4</ref> These holes readily accept free electrons and complement n-type semiconductors as the excess electrons of the n-type can be absorbed by the p-type. This property is integral to the p-n junction, a vital component in the [[diode operation|operation of a diode]]. P-type dopants have three valence electrons, and they include boron, aluminum, and gallium.<ref>''The Doping of Semiconductors'' [Online]. Available:http://hyperphysics.phy-astr.gsu.edu/hbase/solids/dope.html</ref>

For more information on doping semiconductors please see [http://hyperphysics.phy-astr.gsu.edu/hbase/solids/dope.html hyperphysics].

==References==
{{reflist}}[[Category:Uploaded]]