P-n junction - Revision history

Jmdonev: 1 revision imported

2026-06-04T17:16:59Z

1 revision imported

← Older revision	Revision as of 17:16, 4 June 2026
(No difference)

Energy>Jmdonev at 22:31, 22 May 2026

2026-05-22T22:31:35Z

← Older revision		Revision as of 22:31, 22 May 2026
Line 1:		Line 1:
	[[Category:Done ~~2015~~-10-15]]		[[Category:Done 2026-06-01]]
	<onlyinclude>A '''P-N junction''' is formed when a p-type [[semiconductor]] and an n-type semiconductor are placed in contact with each other.</onlyinclude> [[Current]] flows readily in one direction through this junction (this direction is referred to as forward biased), but will not flow easily in the opposite direction (which is reverse biased). The formation of a P-N junction creates a basic [[diode]].<ref name="RE1">HyperPhysics. (September 17, 2015). ''The P-N Junction'' [Online]. Available: http://hyperphysics.phy-astr.gsu.edu/hbase/solids/pnjun.html</ref> For an explicit explanation of how these diodes work, click [[diode operation\|here]].		<onlyinclude>A '''P-N junction''' is formed when a p-type [[semiconductor]] and an n-type semiconductor are placed in contact with each other.</onlyinclude> [[Current]] flows readily in one direction through this junction (this direction is referred to as "forward biased"), but will not flow easily in the opposite direction (which is "reverse biased"). The formation of a P-N junction creates a basic [[diode]].<ref name="RE1">HyperPhysics. (September 17, 2015). ''The P-N Junction'' [Online]. Available: http://hyperphysics.phy-astr.gsu.edu/hbase/solids/pnjun.html</ref> For an explicit explanation of how these diodes work, click [[diode operation\|here]].

	==Charge Movement==		==Charge Movement==
	The joining of these two types of semiconductors results in a movement of [[charge carrier]]s. The n-type semiconductor has a higher concentration of negative charge carriers - [[electron]]s. Conversely, the p-type semiconductor has a higher concentration of the positive charge carrier - [[electron hole]]s. As a result of the difference in concentrations, electrons move and diffuse from the n-type side to the p-type side. Holes diffuse in the opposite direction. In a p-n junction, the diffusion of holes and electrons across the junction results in exposed charges - positive or negative [[ion]] cores in the crystal lattice structure of the semiconductor.<ref name="RE2">PV Education. (September 19, 2015). ''Formation of a PN-Junction'' [Online]. Available: http://www.pveducation.org/pvcdrom/pn-junction/formation-pn-junction</ref> Figure 1 below shows the general structure of these junctions for reference.		The joining of these two types of semiconductors results in a movement of [[charge carrier]]s. The n-type semiconductor has a higher concentration of negative charge carriers ([[electron]]s). Conversely, the p-type semiconductor has a higher concentration of the positive charge carrier ([[electron hole]]s). As a result of the difference in concentrations, electrons move and diffuse from the n-type side to the p-type side. Holes diffuse in the opposite direction. In a p-n junction, the diffusion of holes and electrons across the junction results in exposed charges. Exposed charges are positive or negative [[ion]] cores in the crystal lattice structure of the semiconductor.<ref name="RE2">PV Education. (September 19, 2015). ''Formation of a PN-Junction'' [Online]. Available: http://www.pveducation.org/pvcdrom/pn-junction/formation-pn-junction</ref> Figure 1 below shows the general structure of these junctions for reference.

	[[File:Forward-Biased_pn_Junction.svg.png\|780px\|thumb\|center\|Figure 1. A diagram showing the P-N junction - forward biased - including the depletion region.<ref>Wikimedia Commons. (September 17, 2015). ''Forward Biased PN Junction'' [Online]. Available: https://upload.wikimedia.org/wikipedia/commons/thumb/a/a1/Forward-Biased_pn_Junction.svg/1280px-Forward-Biased_pn_Junction.svg.png</ref>]]		[[File:Forward-Biased_pn_Junction.svg.png\|780px\|thumb\|center\|Figure 1. A diagram showing the P-N junction (forward biased) including the depletion region.<ref>Wikimedia Commons. (September 17, 2015). ''Forward Biased PN Junction'' [Online]. Available: https://upload.wikimedia.org/wikipedia/commons/thumb/a/a1/Forward-Biased_pn_Junction.svg/1280px-Forward-Biased_pn_Junction.svg.png</ref>]]

	As a result of the diffusion of these charge carriers and the exposing of these ions, an [[electric field]] is created at the junction. Since an electric field exists at this point, a [[voltage]] exists as a result of this field. The ~~are~~ between these negative and positive ions where the electric field is produced is known as the depletion region.<ref name="RE2"/> It is called ~~this~~ because in this area, the electric field quickly moves charge carriers out. As a result of this, the depletion region contains no charge carriers as the negative and positive charges essentially cancel each other out.<ref name="RE1"/>		As a result of the diffusion of these charge carriers and the exposing of these ions, an [[electric field]] is created at the junction. Since an electric field exists at this point, a [[voltage]] exists as a result of this field. The area between these negative and positive ions, where the electric field is produced, is known as the depletion region.<ref name="RE2"/> The depletion region is shown as gray in Figure 1. It is called a "depletion region" because in this area, the electric field quickly moves charge carriers out. As a result of this, the depletion region contains no charge carriers as the negative and positive charges essentially cancel each other out.<ref name="RE1"/>

			== For Further Reading ==

			* [[Semiconductor]]
			* [[Electron]]
			* [[Electron hole]]
			* [[Electric field]]
			* [[Diode]]
			* Or explore a [[Special:Random\|random page]]

	==References==		==References==
	{{reflist}}		{{reflist}}[[Category:Uploaded]]

J.williams: 1 revision imported

2015-11-13T01:47:19Z

1 revision imported

← Older revision	Revision as of 01:47, 13 November 2015
(No difference)

Jmdonev at 22:02, 23 September 2015

2015-09-23T22:02:20Z

New page

[[Category:Done 2015-10-15]]
<onlyinclude>A '''P-N junction''' is formed when a p-type [[semiconductor]] and an n-type semiconductor are placed in contact with each other.</onlyinclude> [[Current]] flows readily in one direction through this junction (this direction is referred to as forward biased), but will not flow easily in the opposite direction (which is reverse biased). The formation of a P-N junction creates a basic [[diode]].<ref name="RE1">HyperPhysics. (September 17, 2015). ''The P-N Junction'' [Online]. Available: http://hyperphysics.phy-astr.gsu.edu/hbase/solids/pnjun.html</ref> For an explicit explanation of how these diodes work, click [[diode operation|here]].

==Charge Movement==
The joining of these two types of semiconductors results in a movement of [[charge carrier]]s. The n-type semiconductor has a higher concentration of negative charge carriers - [[electron]]s. Conversely, the p-type semiconductor has a higher concentration of the positive charge carrier - [[electron hole]]s. As a result of the difference in concentrations, electrons move and diffuse from the n-type side to the p-type side. Holes diffuse in the opposite direction. In a p-n junction, the diffusion of holes and electrons across the junction results in exposed charges - positive or negative [[ion]] cores in the crystal lattice structure of the semiconductor.<ref name="RE2">PV Education. (September 19, 2015). ''Formation of a PN-Junction'' [Online]. Available: http://www.pveducation.org/pvcdrom/pn-junction/formation-pn-junction</ref> Figure 1 below shows the general structure of these junctions for reference.

[[File:Forward-Biased_pn_Junction.svg.png|780px|thumb|center|Figure 1. A diagram showing the P-N junction - forward biased - including the depletion region.<ref>Wikimedia Commons. (September 17, 2015). ''Forward Biased PN Junction'' [Online]. Available: https://upload.wikimedia.org/wikipedia/commons/thumb/a/a1/Forward-Biased_pn_Junction.svg/1280px-Forward-Biased_pn_Junction.svg.png</ref>]]

As a result of the diffusion of these charge carriers and the exposing of these ions, an [[electric field]] is created at the junction. Since an electric field exists at this point, a [[voltage]] exists as a result of this field. The are between these negative and positive ions where the electric field is produced is known as the depletion region.<ref name="RE2"/> It is called this because in this area, the electric field quickly moves charge carriers out. As a result of this, the depletion region contains no charge carriers as the negative and positive charges essentially cancel each other out.<ref name="RE1"/>

==References==
{{reflist}}